bdp 948, bdp 950 1 oct-22-1999 pnp silicon af power transistors ? for af driver and output stages ? high collector current ? high current gain ? low collector-emitter saturation voltage ? complementary types: bdp 947, bdp 949 (npn) vps05163 1 2 3 4 type marking pin configuration package bdp 948 bdp 950 bdp 948 bdp 950 1 = b 1 = b 2 = c 2 = c 3 = e 3 = e 4 = c 4 = c sot-223 sot-223 maximum ratings parameter symbol bdp 948 bdp 950 unit collector-emitter voltage v ceo 45 60 v collector-base voltage v cbo 45 60 emitter-base voltage v ebo 5 5 dc collector current i c 3 a peak collector current i cm 5 base current i b 200 ma peak base current i bm 500 total power dissipation , t s = 99 c p tot 3 w junction temperature t j 150 c storage temperature t st g -65 ... 150 thermal resistance junction ambient 1) r thja 42 k/w junction - soldering point r thjs 17 1) package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 cu
bdp 948, bdp 950 2 oct-22-1999 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 10 ma, i b = 0 bdp 948 bdp 950 v (br)ceo 45 60 - - - - v collector-base breakdown voltage i c = 100 a, i b = 0 bdp 948 bdp 950 v (br)cbo 45 60 - - - - emitter-base breakdown voltage i e = 10 a, i c = 0 v (br)ebo 5 - - collector cutoff current v cb = 45 v, i e = 0 i cbo - - 100 na collector cutoff current v cb = 45 v, i e = 0 , t a = 150 c i cbo - - 20 a emitter cutoff current v eb = 4 v, i c = 0 i ebo - - 100 na dc current gain 1) i c = 10 ma, v ce = 5 v i c = 500 ma, v ce = 1 v i c = 1 a, v ce = 2 v h fe 25 85 50 - - - - 475 - - collector-emitter saturation voltage1) i c = 2 a, i b = 0.2 a v cesat - - 0.5 v base-emitter saturation voltage 1) i c = 2 a, i b = 0.2 a v besat - - 1.3 ac characteristics transition frequency i c = 50 ma, v ce = 10 v, f = 100 mhz f t - 100 - mhz collector-base capacitance v cb = 10 v, f = 1 mhz c cb - 40 - pf 1) pulse test: t 300 s, d = 2%
bdp 948, bdp 950 3 oct-22-1999 permissible pulse load r thjs = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -2 10 -1 10 0 10 1 10 2 10 3 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 total power dissipation p tot = f ( t a *; t s ) * package mounted on epoxy 0 20 40 60 80 100 120 c 150 t a ,t s 0.0 0.4 0.8 1.2 1.6 2.0 2.4 w 3.2 p tot t s t a permissible pulse load p totmax / p totdc = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 - p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 dc current gain h fe = f ( i c ) v ce = 2v 10 0 10 1 10 2 10 3 10 4 ma i c 0 10 1 10 2 10 3 10 - h fe -50c 25c 100c
bdp 948, bdp 950 4 oct-22-1999 collector-emitter saturation voltage i c = f ( v cesat ), h fe = 10 0.0 0.1 0.2 0.3 0.4 v 0.6 v cesat 0 10 1 10 2 10 3 10 4 10 ma i c 100c 25c -50c collector cutoff current i cbo = f ( t a ) v cb = 45v 0 20 40 60 80 100 120 c 150 t a -1 10 0 10 1 10 2 10 3 10 4 10 5 10 na i cbo max typ base-emitter saturation voltage i c = f ( v besat ), h fe = 10 0.0 0.2 0.4 0.6 0.8 1.0 v 1.3 v besat 0 10 1 10 2 10 3 10 4 10 ma i c -50c 25c 100c collector current i c = f ( v be ) v ce = 2v 0.0 0.2 0.4 0.6 0.8 1.0 v 1.3 v be 0 10 1 10 2 10 3 10 4 10 ma i c -50c 25c 100c
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